Wafer level flat no-lead semiconductor packages and methods of manufacture

ABSTRACT

Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of earlier U.S. Utilitypatent application to Truhitte entitled “Wafer Level Flat No-LeadSemiconductor Packages and Methods of Manufacture,” application Ser. No.15/883,625, filed Jan. 30, 2018, now pending, which application is adivisional application of the earlier U.S. Utility patent application toTruhitte entitled “Wafer Level Flat No-Lead Semiconductor Packages andMethods of Manufacture,” application Ser. No. 14/341,454, filed Jul. 25,2014, now issued as U.S. Pat. No. 9,892,952, the disclosures of each ofwhich are hereby incorporated entirely herein by reference.

BACKGROUND 1. Technical Field

Aspects of this document relate generally to packages used forsemiconductor devices, such as systems and methods used to connect asemiconductor die to associated circuitry.

2. Background Art

Conventional semiconductor packages connect a semiconductor die to amotherboard or other associated circuitry and provide thermal andenvironmental protection for the device. Examples of conventionalsemiconductor packages include quad-flat no-lead (QFN), dual-flatno-lead (DFN) and leadless land grid array (LLGA) packages. Conventionalpackages are constructed one at a time and involve die bonding, wirebonding, overmolding, and other processing steps used to create amechanical structure that protects the die from environmental, thermal,electrostatic discharge, and other hazards during operation.

SUMMARY

Implementations of a first method of manufacturing a semiconductorpackage may include: providing a substrate where the substrate has afirst side, a second side, and a thickness between the first side andthe second side; forming a plurality of pads on the first side of thesubstrate; and applying die attach material to the plurality of pads.The method may also include bonding a wafer including a plurality ofsemiconductor die to the substrate at one or more die pads included ineach die of the plurality of semiconductor die through the plurality ofpads of the substrate. The method may also include singulating theplurality of semiconductor die, overmolding the plurality ofsemiconductor die and the first side of the substrate with an overmoldmaterial, and removing the substrate to expose the plurality of pads andto form a plurality of semiconductor packages coupled together throughthe overmold material. The method also may include singulating theplurality of semiconductor packages to separate each of the plurality ofsemiconductor packages from each other.

Implementations of the first method of manufacturing a semiconductorpackage may include one, all, or any of the following:

Removing the substrate to expose the plurality of pads may furtherinclude removing the second side and the thickness of the substrate.

Providing the substrate may further include providing the substrate withthe first side dimensioned to cover one quarter, one half, threequarters, or an entire size of the wafer.

Forming the plurality of pads on the first side of the substrate mayfurther include selectively etching the first side of the substrate toform to form the plurality of pads or plating the plurality of pads onthe substrate.

Bonding the wafer including the plurality of semiconductor die to thesubstrate may further include bonding through reflowing the plurality ofpads and the one or more die pads of the plurality of die using a reflowprocess. It may also include curing the die attach material between theplurality of pads and the one or more die pads using a curing process.

Removing the substrate to expose the plurality of pads may furtherinclude selectively removing the substrate to leave one or more portionsof the substrate for use in aligning the plurality of semiconductorpackages during singulation and/or electrically connecting one or moreof the semiconductor packages to one or more other semiconductorpackages.

Applying die attach material to the one or more pads may further includeapplying the die attach material to a predetermined number of theplurality of pads and not applying the die attach material to theremaining pads.

After singulating the plurality of semiconductor die, attaching to oneor more of the die (first die) a second die and electrically couplingthe second die to the substrate.

Electrically coupling the second die to the substrate may furtherinclude wire bonding one or more die pads included in the second die toone more pads of the plurality of pads.

Electrically connecting the second die to the substrate may furtherinclude wire bonding one or more die pads included in the second die tothe one or more die pads of the first die.

Bonding the wafer including the plurality of semiconductor die to thesubstrate at one or more die pads included in each die may furtherinclude where the one or more die pads include a bump and the pluralityof pads of the substrate are bonded to the bump using a reflow processand/or a curing process.

Implementations of a second method of manufacturing a semiconductorpackage may include providing a substrate having a first side, a secondside, a thickness. The substrate may include a pattern. The method mayalso include bonding a wafer including a plurality of semiconductor dieto the first side of the substrate at one more die pads included in eachone of the plurality of semiconductor die and overmolding and/orunderfilling the first side of the substrate with and overmolding and/orunderfill material, respectively. The method may also includeselectively removing the thickness of the substrate from the second sideof the substrate and singulating the plurality of die and the overmoldmaterial and/or the underfill material to form a plurality ofsemiconductor packages.

Implementations of a second method of manufacturing a semiconductorpackage may include, one, all, or any of the following:

Providing the substrate may further include where the pattern includedin the first side of the substrate is formed by selectively etching thepattern into the first side of the substrate, stamping the pattern intothe first side of the substrate, selectively plating the pattern ontothe first side of the substrate, and any combination of the foregoing.

The method may further include stacking two or more of the plurality ofsemiconductor packages and electrically coupling and/or mechanicallycoupling the two or more stacked semiconductor packages thereby.

The method may further include coupling a heat dissipation device toeach of the plurality of semiconductor packages where the heatdissipation device is placed in contact with the semiconductor die.

Singulating the plurality of die and the overmold material and/or theunderfill material to form the plurality of semiconductor packages mayfurther include selectively singulating to leave two or more of theplurality of semiconductor packages coupled together where the couplingof the two or more semiconductor packages is electrical and/ormechanical.

Implementations of a third method of manufacturing a semiconductorpackage may include providing a first base frame, applying die attachmaterial on (to) the first base frame, and bonding a wafer including aplurality of semiconductor die to the first base frame at one or moredie pads included in each one of the plurality of semiconductor diethrough the die attach material. The method may also include singulatingthe plurality of semiconductor die, applying die attach material to theplurality of die and/or a second base frame, and bonding the second baseframe to the plurality of die through the die attach material. Themethod may include overmolding and/or underfilling the plurality ofsemiconductor die between the first base frame and the second base frameand singulating the first and second base frames to form a plurality ofsemiconductor packages.

Implementations of a fourth method of manufacturing a semiconductorpackage may include providing a wafer having a plurality ofsemiconductor die, each having one or more die pads and forming aplurality of package pads where each package pad is coupled to each ofthe one or more die pads. The method may also include mounting the waferto a wafer singulation tape coupled to a wafer singulation tape coupledto a frame, singulating the plurality of semiconductor die, andovermolding or underfilling the plurality of semiconductor die coupledto the wafer singulation tape to form a plurality of semiconductorpackages. The method may also include transferring the plurality ofsemiconductor packages to a package singulation tape coupled to a frameand singulating the plurality of semiconductor packages coupled to thepackage singulation tape to separate each of the plurality ofsemiconductor packages from each other.

Implementations of the method of manufacturing a semiconductor packagemay include one, all, or any of the following:

Mounting the wafer to the wafer singulation tape coupled to a framefurther includes where the wafer singulation tape is dual flat no-leadmold tape.

Mounting the wafer to a wafer singulation tape coupled to the frame mayfurther include where the wafer singulation tape is tape grid ball array(TBGA) flex tape having a plurality of package pad vias therethrough.The method may further include inserting the plurality of package padsinto the plurality of package pad vias and where singulating theplurality of semiconductor packages further includes singulating theTBGA flex tape during singulation the plurality of semiconductorpackages.

The foregoing and other aspects, features, and advantages will beapparent to those artisans of ordinary skill in the art from theDESCRIPTION and DRAWINGS, and from the CLAIMS.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations will hereinafter be described in conjunction with theappended drawings, where like designations denote like elements, and:

FIG. 1 is a cross sectional view of a substrate;

FIG. 2A is a cross sectional view of an implementation of a substratewith plated pads;

FIG. 2B is a cross sectional view of another implementation of asubstrate with etched pads;

FIG. 3 is a cross sectional view of an implementation of a substratewith die attach material applied to the pads;

FIG. 4 is a cross sectional view of an implementation of a substratewith a wafer applied where the die pads on the wafer are aligned withthe pads of the substrate;

FIG. 5 is a cross sectional view of the implementation of FIG. 4 withthe wafer and substrate bonded together;

FIG. 6 is a cross sectional view of an implementation of a substrate andwafer showing the structure of various implementations of bondingapparatus;

FIG. 7 is a cross sectional view of an implementation of a substrateshowing the die following singulation;

FIG. 8 is a cross sectional view of an implementation of a substratefollowing overmolding;

FIG. 9 is a cross sectional view of the implementation of FIG. 8 afterremoval of the substrate showing the exposed pads;

FIG. 10 is an end view of the implementation of FIG. 9 showing theovermolded semiconductor packages mounted to film and on a saw frame;

FIG. 11 is a cross sectional view of the implementation of FIG. 10showing the semiconductor packages following singulation;

FIG. 12A is a top view of a first side of an implementation of asubstrate;

FIG. 12B is a top view of the first side showing a plurality of pads;

FIG. 12C is a top view of the first side with die attach materialapplied to the pads;

FIG. 12D is a top view of the first side of the substrate with the waferbonded to the substrate;

FIG. 13A is a top view of the first side of the substrate of FIG. 12Dwith the semiconductor die singulated;

FIG. 13B is a top view of the first side of the substrate of FIG. 13Aafter completion of overmolding forming a plurality of semiconductorpackages;

FIG. 13C is a top view of the plurality of semiconductor packagesfollowing removal of the substrate;

FIG. 13D is a top view of a plurality of singulated semiconductorpackages following singulation after mounting to film and a saw frame;

FIG. 14 is a cross sectional view of another implementation of asubstrate;

FIG. 15 is a cross sectional view of the substrate implementation ofFIG. 14 after patterning;

FIG. 16 is a cross sectional view of the substrate implementation ofFIG. 15 after selective plating;

FIG. 17 is a cross sectional view of the substrate implementation ofFIG. 16 after wafer bonding;

FIG. 18 is a cross sectional view of the substrate implementation ofFIG. 17 after completion of overmolding/underfilling;

FIG. 19 is a cross sectional view of the substrate implementation ofFIG. 18 following selective removal of the thickness of the substratefrom a second side of the substrate;

FIG. 20 is a cross sectional view of a singulated semiconductor packagefollowing singulation;

FIG. 21 is a cross sectional view of another substrate implementationhaving a pattern on a first side bonded to a wafer having a plurality ofsemiconductor die;

FIG. 22 is a cross sectional view of the substrate implementation ofFIG. 21 following completion of overmolding/underfilling;

FIG. 23 is a cross sectional view of the implementation of FIG. 22following selective removal of the thickness of the substrate from thesecond side of the substrate;

FIG. 24 is a cross sectional view of a semiconductor package followingsingulation of the package;

FIG. 25A is a cross sectional view of a semiconductor package with aheat dissipation device coupled to the package and in contact with thesurface of the semiconductor die;

FIG. 25B is a cross sectional view of a semiconductor package formed bystacking two packages with the surfaces of the semiconductor die beingplaced in contact with each other;

FIG. 26A is a cross sectional view of an implementation of a first baseframe;

FIG. 26B is a cross sectional view of the first base frame followingapplication of die attach material;

FIG. 26C is a cross sectional view of the first base frame followingbonding of a wafer containing a plurality of semiconductor die to thefirst base frame;

FIG. 26D is a cross sectional view of the first base frame followingsingulation of the plurality of semiconductor die;

FIG. 26E is a cross sectional view of the first base frame followingapplication of die attach material to the plurality of semiconductordie;

FIG. 26F is a cross sectional view of the first base frame followingbonding of a second base frame to the plurality of semiconductor die;

FIG. 26G is a cross sectional view of the first and second base framesfollowing overmolding/underfilling of the semiconductor die;

FIG. 26H is a cross sectional view of a plurality of semiconductorpackages following singulation;

FIG. 27 is a cross sectional view of another substrate implementationafter attaching a second die to a first die;

FIG. 28 is a cross sectional view of another substrate implementationafter wire bonding of the second die to the first die and to thesubstrate;

FIG. 29 is a cross sectional view of semiconductor packages followingovermolding and singulation;

FIG. 30 is a cross sectional view of two semiconductor packagesfollowing overmolding and singulation showing die that include bumpsbonded to the pads of a substrate implementation;

FIG. 31 is a cross sectional view of a wafer showing a plurality of diewith die pads;

FIG. 32 is a cross sectional view of the wafer of FIG. 31 with packagepads coupled to the die pads;

FIG. 33 is a cross sectional view of the wafer of FIG. 32 coupled towafer singulation tape and a frame;

FIG. 34 is a cross sectional view of the plurality of die aftersingulation;

FIG. 35 is a cross sectional view of the plurality of die afterovermolding/encapsulation/underfilling forming a plurality ofsemiconductor packages;

FIG. 36 is a cross sectional view of the plurality of semiconductorpackages of FIG. 35 mounted to package singulation tape and a frame;

FIG. 37 is a cross sectional view of the plurality of semiconductorpackages after singulation;

FIG. 38 is a cross sectional view of the plurality of semiconductorpackages after demounting from the package singulation tape, showing theflat lead-less nature of the packages.

DESCRIPTION

This disclosure, its aspects and implementations, are not limited to thespecific components, assembly procedures or method elements disclosedherein. Many additional components, assembly procedures and/or methodelements known in the art consistent with the intended methods ofmanufacturing semiconductor packages and semiconductor packagesthemselves will become apparent for use with particular implementationsfrom this disclosure. Accordingly, for example, although particularimplementations are disclosed, such implementations and implementingcomponents may comprise any shape, size, style, type, model, version,measurement, concentration, material, quantity, method element, step,and/or the like as is known in the art for such methods, semiconductorpackages, and implementing components and methods, consistent with theintended operation and methods.

Implementations of a first method of manufacturing a semiconductorpackage utilize a substrate. Referring to FIGS. 1 and 12A, animplementation of a substrate 2 is illustrated. The substrate has afirst side 4, a second side 6, and a thickness 8 between the first side4 and the second side 6. As illustrated, the first and second sides 4, 6of the substrate 2 are sized larger than the largest flat surface of asemiconductor wafer. In such an implementation, the substrate 2 containsalignment holes 10 therethrough which are located to assist withaligning the wafer with the substrate 2. This alignment can take placethrough referencing the flat or notch of the wafer and the alignmentholes 10. As illustrated, these alignment holes 10 may be located rightat the edge of the location where the wafer edge contacts the substrate2. In other implementations, the alignment holes 10 may be located inareas within the circumference of the wafer itself. The substrate 2 caninclude one or more identification codes (such as a bar code) which maybe utilized by processing equipment to track the substrate 2 during themanufacturing process and to associate wafer map(s) containing die sortinformation for the particular wafer with the substrate for use in diesorting further in the process.

In various implementations of substrates 2, the substrate 2 may besmaller than the size of the largest flat surface of the wafer and maycover one quarter, one half, three quarters, the entire size of thelargest flat surface of the wafer, or any portion of the wafer thatcontains at least two or more semiconductor die formed thereon.Accordingly, in various implementations, multiple substrates may beemployed when packaging die contained in a single wafer. Because in manymethod implementations disclosed herein, the semiconductor die areprocessed in wafer level pieces, implementations of the methodsdisclosed herein may be referred to as “wafer level” packaging methods.In implementations of substrates that are the same size as the wafer,the substrate may include a notch/flat alignment feature configured toalign with the wafer notch/flat. In various implementations, alignmentpatterns may be printed, stamped, etched, or otherwise formed in thesurface of the substrate 2 for use during processing to align the waferwith the substrate. These alignment features may be utilized by otherprocess tools, including singulation tools, such as saws, in subsequentprocessing steps. In addition, in particular implementations, patternsmay be formed in the surface of the substrate using any method disclosedherein that are design to relieve stress caused by coefficient ofthermal expansion (CTE) mismatch (differences) between the particularmaterial the substrate is formed from and the material forming the waferor semiconductor die on the wafer. In such implementations, the patternsmay alleviate differences in the thermal expansion behaviors between thetwo materials of the substrate and wafer.

Substrate 2 implementations may include materials such as, bynon-limiting example, metals and other metal alloys such as copper,Alloy 42 (42% Ni, balance Fe), plastics, composites, resins, and anyother material that is capable of being etched or otherwise removedduring subsequent processing without damaging the semiconductor die. Thesubstrate may also be a silicon wafer or other wafer formed of asemiconducting material. In implementations where a silicon wafer used,the thickness of the wafer may be about 8 to about 15 mils. Those ofordinary skill will appreciate that a wide variety of materials may beemployed in various implementations of substrates and will be able toselect these materials according to the principles disclosed herein.

Referring to FIGS. 2A and 12C, an implementation of a substrate 12 withplated pads 14 is illustrated. As illustrated, the pads 14 may be formedof one or more layers of plated materials. In the implementationillustrated in FIGS. 2A and 12C, the pad 14 is formed by firstsequentially selectively plating layers of gold, palladium, nickel, andpalladium (22, 20, 18, 16, respectively) to form a PdNiPdAu stackedplated pad 14. Any of a wide variety of conventional plating techniquesand systems may be utilized in forming the pads 14, such as, bynon-limiting example, electroplating, solder patterning, epoxypatterning, thick film plating, patterned solder dispense, and any othermetal plating/dispensing technique. The pads 14 are plated at a desiredsize to correspond with one or more die pads on the semiconductor dieincluded on the semiconductor wafer. The particular size and pitch ofthe pads 14 plated on the substrate 12 is decided to establish the padsof the finished semiconductor package. The particular size and pitch ofthe pads 14 plated on the substrate 12 is decided to ensure propercoverage of the die pads and the flow characteristics of applied filletsof die attach materials to be used later on in the process, if the dieattach materials are intended to be flowable. While in particularimplementations, the pitch and size of the pads corresponds with thepitch and size of the die pads, this relationship is not required, butmay vary according to the characteristics of the die pads or substrate(i.e., if the die pads include bumps). Furthermore, there may be fewerpads than the number of die pads or more, depending upon the nature ofthe electrical interconnect structure formed between the die and thesubstrate. The thickness of the plated pad (and pad stack ifmultilayered) is determined to ensure that encapsulating material(overmold or underfill) can enter the regions between the wafer and thesubstrate when the wafer and substrate 12 are bonded together insubsequent processing steps.

In various implementations, the wafer may be thinned through grindingand/or lapping prior to processing using the method implementationsdisclosed herein or may be processed without any thinning. In particularimplementations, the thickness of the wafer may be about 4 to about 6mils. In particular implementations, the size of the die pads may beabout 75 microns. Each die pad may be surrounded by various layers ofmaterial intended to aid in passifying the active area of the die,including, by non-limiting example, oxide, nitride, polyimide, and othermaterials intended to prevent moisture and other physical and electricalcontaminants from entering the active area of the die. The die pad maybe formed of an aluminum copper metal alloy or other metal materialadapted for use in epoxy, solder, or eutectic bonding as describedherein. Where the size of the die pads is about 75 microns, the size ofthe pads 14 is about 170 by about 110 microns to match the finished caseoutline dimensions. The metal selected for the pads 14 may be Cu, Au, aTiNiAgAu alloy (stack in particular implementations, NiPdAu as disclosedherein, or other solderable metals and metal alloys that will not etchduring subsequent processing steps (such as substrate removal or wafergrinding/thinning).

Referring to FIGS. 2B and 12B, an implementation of a substrate 24 isillustrated that has pads 26 that have been selectively etched into thesubstrate 24. As illustrated, the substrate 24 may have a patterningmaterial 28 placed above each of the pads 26 to protect them from theetching process and form the pad. This patterning material 28 may bephotoresist, hard mask, solder, epoxy, a plated dissimilar metal to themetal of the substrate, or any other material resistant to theparticular etching process/chemistry employed. The patterning material28 may be removed after the etching process or may remain on the pads 26if a material appropriate for bonding or subsequent processing. Invarious implementations, an etching process may not be used to form thepads, but they may be formed by stamping or other mechanical processing(including casting, molding, etc. during formation of the substrateitself) of the substrate.

Referring to FIGS. 3 and 12C, the substrate 12 implementationillustrated in FIG. 2A is shown after application of die attach material30 to the pads 14. The die attach material 30 may be any of a widevariety of materials including solder, epoxy, patterned die attach film(DAF), solder preforms, and any other material capable of participatingin and/or establishing a bond between the pads 14 and the die pads onthe wafer. The die attach material 30 may be applied to the pads throughuse of a stencil and screen printing, a stencil and spray coating,patterned solder dispense, patterned epoxy dispense, or application ofDAF to the top surfaces of the pads 14. Many other conventionalprocessing techniques may be utilized in applying the die attachmaterial to the pads 14. Where epoxy is used, the epoxy may remainuncured until the next processing step or may be B-stage cured prior tosubsequent processing. The die attach material may also, in particularimplementations, be electrically conductive.

In this and other implementations of methods of forming a semiconductorpackage disclosed herein, the process of applying and using a die attachmaterial 30 may not be used. In such implementations, instead of using adie attach material 30, a thermal process may be employed to formeutectic metal bonds between the metal(s) in the pads and the die pads.Accordingly, the step of applying die attach material 30 is omitted inthese implementations after the pads are formed on the substrate.

Referring to FIGS. 4 and 12D, the wafer 32 is shown applied over thesubstrate 12. As illustrated in FIG. 12D, the wafer 32 is applied in analigned configuration relative to the substrate 12 to ensure alignmentbetween the pads 14 and the die pads 34 as the wafer 32 contacts the dieattach material 30. Any of the alignment features and techniquesdisclosed herein may be utilized in various implementations toaccomplish the alignment between the wafer 32 and the substrate 12. Asillustrated in FIG. 12D, since the substrate 12 in this implementationis larger than the wafer 32, the alignment holes 10 can be used toensure the wafer 32 is centered over the substrate 12. Additionalalignment features (such as using the wafer notch or flat) may be usedto ensure the wafer is also properly rotationally aligned over thesubstrate 12 as well. In various implementations, where the substrate 12is not larger than or the same size as the wafer 32 and is composed ofseveral portions, it may be that the substrate portions are applied tothe wafer 32 rather than the wafer 32 being applied to the substrate. Inother implementations, portions of the wafer 32 may be applied to thesubstrate 12 (i.e., quarters, halves, etc.) if the wafer has beenpreviously singulated, or multiple wafers may be applied to a singlesubstrate (where the substrate is much larger than an individual wafer).In some implementations, individual singulated semiconductor die may beapplied to the substrate 12 using various die placement techniques andprocesses. In other implementations, a mixture of wafer portions andsingulated die may be applied to the substrate 12, depending upon theultimate configuration of the semiconductor package being manufactured.

Referring to FIG. 5, a cross sectional view of the wafer 32 andsubstrate 12 bonded together at the pads 14 following completion of thethe wafer/substrate bonding process is illustrated. As illustrated, thedie pads are bonded to the pads 14, and may, in particularimplementations, be soldered or otherwise welded to the material of thepad stack. The wafer bonding process itself may be accomplished usingvarious techniques. Referring to FIG. 6, the bonding process may utilizea lower plate 34 and an upper plate 36 that each take several forms andperform various functions. In a first bonding process implementation,the lower plate 34 is a work holder and the upper plate is a clampingplate which maintains a bias force between the substrate 12 and wafer 32as the assembly of the upper plate 36, wafer 32, substrate 12, and lowerplate 34 are placed in a curing chamber/oven or reflow chamber/oven tobe heated. The curing chamber would be used to cure the die attachmaterial and the reflow chamber would be used to solder or otherwiseweld the metals of the die pads to the pads 14. In a secondimplementation, the upper plate 36 is a clamping plate and the lowerplate 34 is a heater plate, and the bonding takes place as the curing orreflow occurs via the heat provided from the lower plate 34 under thebias force provided by the clamping plate. In a third implementation,the upper plate 36 and lower plate 34 are both heater plates, and thebonding process takes place under the influence of the heat provided byboth plates. In a fourth implementation, the upper plate 36 is a heaterplate and the lower plate 34 is a work holder. In this implementation,bonding takes place as the substrate 12 is held in the work holder andthe wafer 32 is heated by the upper plate 36. The bonding that takesplace in these various implementations may be a curing, reflow, oreutectic bonding process like those described herein.

Referring to FIGS. 7 and 13A, the substrate 12 and wafer 32 areillustrated following the completion of singulation of the semiconductordie 38 from the semiconductor wafer 32. The process of singulation ofthe die 38 can take place using many different processes including, bynon-limiting example, saw cut, plasma etching, laser cutting, highpressure water jet, and other processes capable of cutting the materialsfrom which the wafer 32 is made. Where saw cutting, laser cutting, andhigh pressure water jet processes are used, the back of the wafer willneed to have alignment features placed in various locations on the waferto permit the process tool to align the wafer prior to carrying out thecutting process. Where plasma etching processes are employed, apatterned oxide layer, photoresist mask, patterned polyimide, metalmask, hard mask or other protective pattern/structure is put in place onthe back of the wafer 32 to protect the individual die 38 during theetching process. Depending upon the singulation process used, variouscleaning process(es) and method(s) may need to be utilized to clean theareas between the die 38 and remove any remaining portions of the wafer32. As illustrated in FIG. 13A, in various implementations of the methodof manufacture, spaces between the die 38 are left following thesingulation process. In other implementations, the space between eachdie 38 may be only the width of the cut itself and may be much smallerin proportion of the size of the die 38 than in the implementationillustrated in FIG. 13A.

Referring to FIGS. 8 and 13B, the die 38 and substrate 12 areillustrated following the overmolding or underfill process whichdispenses an overmold or underfill material over the die 38 and fillsall the spaces between the pads 14 and the die 38. Where overmolding isused, the overmold material may be an epoxy resin, injection plasticmaterial, compression molding, or other overmold (encapsulating)compound capable of flowing/filling the spaces around the die and underthe pads. In various implementations, the encapsulation processcompletely covers the entire surface of the die 38, or may leave someportion or all of the die 38 exposed following encapsulation for latercoupling with a heat transfer/dissipation device, for additional dieplacement, or for forming electrical or mechanical connections. Invarious implementations of the method, the substrate 12 and/or a moldcavity block used in the overmolding process may include structuresdesigned to control warpage of the overmolded die. In particularimplementations, a mold array package (MAP) molding process may beemployed to permit a single mold cavity to be used to overmold manydifferent die/package sizes. In other implementations, a cavity basedmold process may be used for larger components to make subsequentsingulation of the packages easier. A wide variety of overmolding andunderfilling techniques (epoxy fillet dispensing, etc.) may be employedto complete the overmolding/underfilling process in variousimplementations. In some implementations, a combination of underfillingand overmolding processes may be employed where underfilling is used tofill the space under the die 38 between the pads 14 and overmolding isused to fill the space between the die 38.

Referring to FIGS. 9 and 13C, the plurality of die 38 encapsulated inthe encapsulating (overmolding/underfilling) material 40 (plurality ofsemiconductor packages 42) are illustrated after removal of thesubstrate 12. As illustrated, the entirety of the substrate 12 isremoved in particular implementations of the method, leaving the pads 14exposed. In other implementations, portions of the substrate 12 may beretained during the removal process for use in alignment in subsequentprocess steps or for mechanical or electrical interconnection. A numberof processes may be utilized to remove the substrate. Where thesubstrate 12 is made of a metal-based material, an etch process can beused to remove the substrate 12, by etching the second side of thesubstrate until the entire thickness of the substrate has been removed.If the substrate is formed of a material similar to the semiconductormaterial(s) of the die 38, then techniques such as, by non-limitingexample, ultraviolet (UV) exposure, heat, application of ultrasonicenergy, and other methods of separating the pads and the encapsulatingmaterial 40 from the first side of the substrate 12 may be used. Wherethe substrate is a silicon-containing wafer, the substrate can be grounddown completely to the pads 14, dry and/or wet etched completely away,or removed through any combination of grinding, dry, and/or wet etching.As illustrated in FIG. 9, after removal of the substrate 12, the pads 14remain, and are exposed through the encapsulating material 40. Inparticular implementations, the pads 14 may be flush to the surface ofthe encapsulating material 40, or they may protrude outwardly orinwardly from the surrounding surface of the encapsulating material 40.In any of these implementations, because the pads are exposed directlythrough the encapsulating material, the resulting semiconductor packagemay be referred to as “leadless” or “no-lead” as the pads are contactedby leads in a socket receiving the package rather than acting as leadsengaged with or soldered to a mounting structure.

In particular implementations, following the exposure of the pads 14through the removal of the substrate 12, the method may include platingan additional layer of metal onto the exposed pads. This layer of metalmay be added to ensure a pristine or improved quality metal surface ispresent on each pad for subsequent soldering to a circuit board orcontacting in a mounting structure. This additional layer may be neededto repair or finish the surfaces of the pad that have contacted etchantsor abrasives during the removal of the substrate. This layer of metalmay be composed of the same material as that in the pads already or maybe a similar or dissimilar metal layer. One or more layers may be addedin various implementations, and the particular metals used may be anydisclosed in this document used in pad structures.

Referring to FIG. 10, the plurality of semiconductor packages 42(semiconductor packages 42) coupled together through the encapsulatingmaterial 40 is shown mounted on saw tape 44 and a saw frame 46 prior tosingulation. In this view, the plurality of semiconductor packages 42 isshown in an end view where the end is fully encapsulated by theencapsulating material 40. The saw tape 44 that may be employed may bestandard film or UV release film, depending upon the processing desired.Once mounted on saw tape 44 on a frame 46, the semiconductor packages 42can be mounted to the saw chuck for singulation. In variousimplementations, laser cutting or high pressure water jet cutting couldbe used for singulation as well. The plurality of semiconductor packages42 may be singulated with the pads 14 facing the saw blade or facing thesaw chuck, depending on the package orientation desired by downstreamprocess operations (i.e., the next or subsequent process step needingthe package pad side up or pad side down). Various alignment structurescan be utilized to enable accurate cutting of the semiconductorpackages, and in various implementations, single or multiple line(street) cuts can be made to leave two or more semiconductor packagesstill mechanically and/or electrically coupled together through theencapsulating material 40. Referring to FIGS. 11 and 13D, the pluralityof semiconductor packages 42 are illustrated after the singulationprocess has been completed and each package 48 is now separated fromevery other package while still being attached to the saw tape 44. Atthis point, the individual semiconductor packages 42 can be removed fromthe saw tape 44 and sent on for further processing as individual unitsin carrier tape or in another package handling/storage device.

Referring to FIG. 14, implementations of a second method ofmanufacturing a semiconductor package utilize a substrate 50, which isthen patterned to correspond with a plurality of semiconductor dieincluded in a wafer. As illustrated in FIG. 15, the pattern may includethe formation of features of varying dimensions, shapes, and heightsrelative to the original surface of the first side 52 of the substrate50. As illustrated, the pad features 54 have been created, and areetched slightly lower than the central portion 56 of the substrate 50.The patterning process may be any disclosed in this document, includingetching, selective etching, and mechanical stamping. The substrate 50used in various implementations may also be made of any substratematerial disclosed herein. FIG. 16 shows the substrate 50 after portionsof it have been selectively plated with a metal. In the implementationillustrated, the pads 54 have been plated on both the first side 52 andsecond side 58 of the substrate 50 while the central portion of thesubstrate 56 was plated on only the second side 58 of the substrate 50.Other combinations of plating of the features are possible using theselective plating process, which may be any plating or metal applicationprocess disclosed herein.

Referring to FIG. 17, a wafer 60 is now bonded to the substrate 50. Thebonding process may be any disclosed in this document or any combinationof processes disclosed in this document. Because the plating of thefeatures that may be in contact with the surface of the wafer may beselective, the bonding may take place through reflowing in certain areasof the wafer where the metals from the die pad contact the metal of thepad 54 and through curing in areas of the wafer where the silicon orother passivating material(s) covering the wafer contact the unplatedportions of the substrate 50 and are bonded through a material such asan epoxy. Multiple bonding methods and steps may accordingly be employedto complete the bonding process. Following bonding, anovermold/underfill process is employed to fill the spaces between thepads 54 and the central portion 56 and the wafer 60 as illustrated inFIG. 18. The overmold/underfill material 60 (encapsulating material) maybe any disclosed in this document and may be applied using any methoddisclosed herein. In many implementations, the use of a combinedovermold and underfill process may be employed to fill the desiredareas.

FIG. 19 illustrates the substrate 50 after it has been etched back fromthe second side 58 of the substrate 50 through the remaining thickness64 of the substrate 50, separating the pads 54 from the central portion56. In situations where the substrate 50 is electrically conductive,this step serves to electrically isolate the pads 54 from the centralportion 56 where the encapsulating material 62 is an electricalinsulator. The selective etch may take place using the selectivelyplated material on the second side 58 of the substrate 50 as a mask, oradditional masking material may be employed (which may be any disclosedin this document). As illustrated, the directionality of the etch may besubstantially anisotropic (as illustrated by the left-most pad 54) orisotropic, as illustrated by the right-most pad (54) which showsundercutting under the plated material. Etches of varying directionalitymay be employed in all etching processes disclosed herein. While etchingmay be used to remove the material, singulation from the second side 58of the substrate 50 could also be employed to remove the material inparticular implementations.

Following etching and/or singulation, the semiconductor die 66 are thensingulated to mechanically separate each semiconductor package 68 fromthe rest of the plurality of semiconductor packages joined through thewafer 60 and the encapsulating material 62. Any of the singulationprocesses disclosed in this document may be employed in variousimplementations to singulate the packages 68. In particularimplementations, the singulation process may be selective, meaning thattwo or more of the packages 68 may continue to be coupled togethermechanically and/or electrically.

Implementations of a third method of manufacturing a semiconductorpackage utilize a patterned substrate 70. As illustrated in FIG. 21, thepatterned substrate 70 is then attached/bonded to a wafer 72 on a firstside 74 of the substrate 70 but where the substrate is oriented abovethe wafer 72 rather than beneath as in previous method implementations.The patterning on the substrate 70 may be formed using any method orprocess disclosed in this document, and a wide variety of featuresinclude pads 76 and central portions 78 may be included in the pattern.The attachment/bonding process utilized between the wafer 72 and thesubstrate 70 may also be any disclosed herein, and may involve a dieattach material in particular implementations. Following bonding,referring to FIG. 22, an overmolding/underfilling process is used tofill the space(s) between the wafer 72 and the substrate 70 withovermold/underfill material 80 (encapsulating material), which may beany material type and applied using any process disclosed in thisdocument. In particular implementations, film molding may be employed todo the overmold/underfill. Referring to FIGS. 22, 23 and 24, followingencapsulation, an etching/singulation process may be used to separatethe tie bars 82 that join the pads 76 to the central portion 78. Aspreviously discussed, where the substrate is electrically conductive,this may serve to electrically isolate the pads 76 from the centralportion 78. The wafer 72 is then singulated, separating the individualsemiconductor packages 84 from each other. The wafer singulation processmay be any disclosed in this document.

As previously discussed, the singulation process for the wafer may beselective, meaning that two or more of the packages 84 may be eithermechanically and/or electrically coupled together following singulation.Referring to FIG. 25A, implementations of packages 42, 68, 84 creatingusing the method implementations disclosed herein may have heatdissipation devices 86 (such as heat sinks, heat pipes, etc.) coupled tothe surface of the semiconductor die 78 following singulation or priorto singulation. In other implementations, the heat dissipation devices86 may be coupled to the central portion 78 of the packages, dependingupon the mounting configuration used. In other implementations, two ormore packages 84 may be stacked and the surfaces of the semiconductordie in each package placed in contact with each other. In otherimplementations, the stacking may place the substrate in one packageagainst the surface of the semiconductor die. A wide variety ofarrangements of packages are possible using the principles disclosedherein.

Implementations of a fourth method of manufacturing a semiconductorpackage include providing a base frame 88 (first base frame) forterminals for use in a press fit package type (see FIG. 26A). The baseframe 88 contains a plurality of terminals for use in the press fitpackage. Referring to FIG. 26B, die attach material 90 is then appliedto the base frame 88 above each of the terminals 92. The die attachmaterial 90 employed and method of application may be any disclosed inthis document. Following application of the die attach material 90, awafer 94 with a plurality of semiconductor die is then attached/bondedto the first base frame 88 using any of the attachment/bonding processesdisclosed herein (see FIG. 26C). The wafer 92 is then singulated toseparate the die 96 in the wafer 92 bonded to the first base frame 88(FIG. 26D). In particular implementations, referring to FIG. 26E,additional die attach material 98 is then applied to each of the die 96.In other implementations, the die attach material 98 may be applied to asecond base frame rather than to the die 96. Following application ofthe die attach material 98, as illustrated in FIG. 26F, the second baseframe 100 is attached/bonded to the die 96 using any process disclosedherein. At this point, an overmold/underfill process is employed toencapsulate each of the die between the first base frame 88 and thesecond base frame 100 with encapsulation material 102 (see FIG. 26G).Any of the overmold/underfill processes and materials disclosed hereinmay be employed in this step of the method. Each of the plurality ofsemiconductor packages 104 defined by the first base frame 88 and thesecond base frame 100 are then singulated (see FIG. 26H), which createsa set of individual semiconductor packages 104 which are now press fitpackages.

Implementations of a fifth method of forming a semiconductor package aresimilar to the first implementation other than that followingsingulation of the individual die from the wafer, particularimplementations may leave pads on the substrate exposed. In otherimplementations of the method, however, all of the pads on the substratemay be in contact with the die pads. Referring to FIG. 27, animplementation of a substrate 106 is illustrated bonded to die 108(first die) with pads 110 exposed. In such implementations, prior tobonding, the die attach material may be selectively applied to thosepads which will be in contact with die pads and not to those pads whichwill be exposed following singulation. As illustrated in FIG. 27, asecond die 112 has been attached to the first die 108. The attachmentprocess of stacking the second die 112 on the first die 108 may takeplace through a variety of conventional methods and also through any ofthe attaching/bonding method disclosed herein, including using dieattach material.

Following attaching of the second die 112 to the first die 108, thesecond die 112 is then electrically connected to the substrate 106. Thismay be accomplished in several ways. In some implementations, the diepads on the second die 112 are wire bonded to the first die 108. Inother implementations, the die pads on the second die 112 are wirebonded to the pads 110 of the substrate 106. In particularimplementations, as illustrated in FIG. 28, the second die 112 is wirebonded to the first die 108 and the pads 110. Following wire bonding,the wafer and first side 114 of the substrate 106 are then encapsulatedusing an overmolding/underfilling process like those disclosed hereinand encapsulating material 116 disclosed in this document. Followingencapsulation, the substrate 106 is removed, exposing the pads 110 aspreviously described herein. The plurality of semiconductor packages 118are then singulated (see FIG. 29), creating a stacked die no-leadsemiconductor package. The singulation and substrate removal processesmay be any disclosed herein.

Referring to FIG. 30, implementations of methods of manufacturingsemiconductor packages disclosed herein may be utilized to manufacturesemiconductor packages for die 120 that have die pads that include bumps122 through bonding of the bumps 122 to the pads 124 of the substrate.In such implementations, reflow bonding processes and underfill moldingmethods may be utilized to ensure that the bumps 122 properly attach tothe pads 124 and that the underfill (encapsulating) material 126 fillsall of the areas between the bumps 122. FIG. 30 illustrates two packages128 following the final singulation step that each include die withbumps 122. In various implementations, the methods disclosed herein maybe used to package die on a semiconductor wafer that are both bumped andunbumped through adjustments in the bonding process and formation of thepads on the substrate. A wide variety of possible packages involvingbumped and unbumped die may be constructed using the principlesdisclosed herein.

Referring to FIG. 31, implementations of methods of manufacturingsemiconductor packages disclosed herein may be utilized to manufacturesemiconductor packages without using a substrate material, directly froma wafer 130 comprising a plurality of active devices (die) 132. Each ofthe die 132 includes one or more die pads 134, forming, in combinationwith all of the die pads 134 of the various die 132, a plurality of diepads 134. Referring to FIG. 32, in implementations of the method, aplurality of package pads 136 are formed and coupled to the plurality ofdie pads 134, one package pad to each die pad. In particularimplementations, the package pads 136 are plated onto the plurality ofdie pads 134, though in various implementations, other methods ofcoupling a metal material to each of the die pads could be used. Inparticular implementations, the package pads 136 may be plated about 5to about 10 microns above the surface of the die pads 134. The packagepads 136 may be made of any pad type made of any material type disclosedin this document, and may, in some implementations, be bumps.

Referring to FIG. 33, after the package pads 136 have been formed, thewafer 130 is mounted to wafer singulation tape 138 on a frame 140. Insome implementations, like the one illustrated in FIG. 33, the wafer 130is mounted package pad side up; in others, like the one illustrated inFIG. 35, the wafer 130 is mounted package pad side down. Inimplementations where the wafer 130 is mounted package pad side down,oxide and backside alignment features may be used to permit the wafer tobe aligned during processing the various processing steps followingmounting. In various implementations, the wafer singulation tape 138 isdual flat no-lead (DFN) mold tape. In other implementations, the wafersingulation tape 138 is tape grid ball array (TBGA) flex tape. Where thetape is TBGA flex tape, the wafer singulation tape 138 may include inparticular implementations a plurality of package pad vias through thewidth of the tape which permit the package pads 136 to extend intoand/or through them.

Following mounting of the wafer 130 to the wafer singulation tape 138,die 132 are singulated. In particular implementations, the singulationmay take place through use of a plasma etching process. Where plasmaetching is used, the wafer 130 may be patterned to aid in the selectiveetching process. The patterning material may be an oxide pattern on theback side of the wafer, a photoresist, hardmask, or other material thatresists the etching process. In particular implementations, the plasmaetching process that may be employed may be deep reactive ion etching(DRIE). In other implementations, other singulation techniques may beemployed to separate the die 132 from each other, including any of thosedisclosed in this document.

With the plurality of die 132 separated from each other, the methodincludes overmolding, encapsulating, and/or underfilling the die 132with an overmold/encapsulating/underfill material 140, respectively. Anyof the overmolding, encapsulating, and underfilling methods, systems,and materials disclosed in this document may be employed in variousimplementations. Also, combinations of overmolding, encapsulating, andunderfilling methods may be employed in particular implementations. Onceenclosed in the overmold/encapsulating/underfill material 140, theplurality of die 132 now form a plurality of semiconductor packages.

In implementations of the method where the wafer singulation tape 138 isDFN mold tape, the plurality of semiconductor packages 142 are demountedfrom the DFN mold tape and remounted to package singulation tape 144coupled to a frame 146 (see FIG. 36). The package singulation tape 144may be any singulation tape disclosed in this document. Inimplementations of the method where the wafer singulation tape 138 isTBGA flex tape, the plurality of semiconductor packages 142 and thewafer singulation tape 138 remain coupled (through the package pad viasin some implementations) and both are mounted to the wafer singulationtape 138. Following mounting to the package singulation tape 144, andreferring to FIG. 37, the plurality of packages 142 are then singulatedto separate them from each other as desired to form a plurality ofseparated semiconductor packages 148. Any of the package singulationmethods and systems disclosed in this document may be employed invarious implementations. As seen in FIG. 38, the separated semiconductorpackages 148 are then removed from the wafer singulation tape 138 andthe die 132 can now be coupled to a circuit board or other mountingdevice through the package pads 136 in a flat, lead-less configuration.

In places where the description above refers to particularimplementations of methods of manufacturing semiconductor packages,semiconductor packages, die, substrates, and implementing components,sub-components, methods and sub-methods, it should be readily apparentthat a number of modifications may be made without departing from thespirit thereof and that these implementations, implementing components,sub-components, methods and sub-methods may be applied to otherimplementations of methods of manufacturing semiconductor packages, andother implementations of semiconductor packages, die, substrates, andother implementing components.

What is claimed is:
 1. A method of manufacturing a semiconductorpackage, the method comprising: providing a substrate, the substratehaving a first side, a second side, and a thickness where the first sideof the substrate comprises a pattern; bonding a wafer comprising aplurality of semiconductor die to the first side of the substrate at oneor more die pads comprised in each one of the plurality of semiconductordie; one of overmolding or underfilling the first side of the substratewith one of an overmold material or an underfill material, respectively;from the second side of the substrate, selectively removing one or moreportions of the thickness of the substrate; and singulating theplurality of semiconductor die and one of the overmold material or theunderfill material to form a plurality of semiconductor packages.
 2. Themethod of claim 1, wherein providing the substrate further compriseswherein the pattern comprised in the first side of the substrate isformed by a process selected from the group consisting of selectivelyetching the pattern into the first side of the substrate, stamping thepattern into the first side of the substrate, selectively plating thepattern onto the first side of the substrate, and any combinationthereof.
 3. The method of claim 1, further comprising stacking two ormore of the plurality of semiconductor packages and one of electricallycoupling and mechanically coupling the two or more stacked semiconductorpackages thereby.
 4. The method of claim 1, further comprising couplinga heat dissipation device to each of the plurality of semiconductorpackages, the heat dissipation device being placed in contact with theplurality of semiconductor die.
 5. The method of claim 1, whereinsingulating the plurality of semiconductor die and one of the overmoldmaterial or the underfill material to form the plurality ofsemiconductor packages further comprises selectively singulating leavingtwo or more of the plurality of semiconductor packages coupled togetherwhere the coupling of the two or more semiconductor packages is one ofelectrical or mechanical.
 6. The method of claim 1, wherein eachsemiconductor die of the plurality of semiconductor die is coupled overtwo die pads.
 7. The method of claim 1, wherein a metal layer separatesthe one or more die pads and the wafer.
 8. A method of manufacturing asemiconductor package, the method comprising: patterning a first side ofa substrate; coupling a wafer comprising a plurality of semiconductordie to the first side of the substrate; applying a mold compound to thefirst side of the substrate; exposing the mold compound by selectivelyremoving one or more portions of the second side of the substrate; andsingulating the plurality of semiconductor die and mold compound to forma plurality of semiconductor packages.
 9. The method of claim 8, whereinpatterning the substrate comprises forming a plurality of cavities inthe first side of the substrate between a central portion of thesubstrate and two die pads of the substrate.
 10. The method of claim 8,further comprising coupling a first metal plate to the first side of thesubstrate and coupling a second metal plate to the second side of thesubstrate.
 11. The method of claim 8, wherein the wafer is directlycoupled to a central portion of the substrate and a metal plate iscoupled between a die pad of the substrate and the wafer.
 12. The methodof claim 8, wherein selectively removing one or more portions of thesecond side of the substrate comprises etching the second side of thesubstrate.
 13. The method of claim 8, wherein each semiconductor die ofthe plurality of semiconductor die covers a central portion of thesubstrate and two die pads of the substrate.
 14. The method of claim 8,wherein a thickness of a die pad formed in the substrate is less than athickness of a central portion of the substrate.
 15. A method ofmanufacturing a semiconductor package, the method comprising: formingone or more recesses in a first side of a substrate, wherein the one ormore recesses separate one or more die pads of the substrate from acentral portion of the substrate; coupling a wafer comprising aplurality of semiconductor die to the first side of the substrate;removing one or more portions of the substrate between the centralportion of the substrate and the one or more die pads of the substrate;and singulating the plurality of semiconductor die.
 16. The method ofclaim 15, further comprising coupling a first metal plate to a firstside of the substrate and coupling a second metal plate to a second sideof the substrate.
 17. The method of claim 15, wherein the wafer isdirectly coupled to the central portion of the substrate and a metalplate is coupled between the one or more die pads of the substrate andthe wafer.
 18. The method of claim 15, wherein removing one or moreportions of the substrate comprises etching the substrate from thesecond side of the substrate.
 19. The method of claim 15, furthercomprising applying a mold compound within the one or more recesses. 20.The method of claim 19, wherein the mold compound comprises an epoxyresin.